Spansion LLC v. Samsung Electronics Co. Ltd. et al
Plaintiff Spansion LLC alleged that Defendants Samsung Electronics Co. Ltd., Samsung Electronics America, Inc., Samsung Semiconductor, Inc., Samsung Telecommunications America, LLC and Samsung Austin Semiconductor, LLC infringed U.S. Patent No. 6,455,888 entitled "Memory Cell Structure for Elimination of Oxynitride (ONO) Etch Residue and Polysilicon Stringers," U.S. Patent No. 6,509,232 entitled "Formation of STI (Shallow Trench Isolation) Structures Within Core and Periphery Areas of Flash Memory Device," U.S. Patent No. 5,831,901 entitled "Method of Programming a Memory Cell to Contain Multiple Values," U.S. Patent No. 5,911,202 entitled "Method for Reducing Program Disturb During Self-Boosting in a NAND Flash Memory," U.S. Patent No. 6,433,383 entitled "Methods and Arrangements for Forming a Single Interpoly Dielectric Layer in a Semiconductor Device," and U.S. Patent No. 6,246,610 entitled "Symmetrical Program and Erase Scheme to Improve Erase Time Degradation in NAND Devices."
| Spansion LLC |
| Samsung Electronics Co. Ltd., Samsung Electronics America Inc., Samsung Semiconductor Inc., Samsung Telecommunications America LLC and Samsung Austin Semiconductor LLC |
| 1:2008cv00855 |
| November 17, 2008 |
| US District Court for the District of Delaware |
| Patent Office |
| XX US, Outside State |
| Unassigned Judge |
| Both |
| Federal Question |
| 35:271 Patent Infringement |
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Filing
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COMPLAINT filed with Jury Demand against Samsung Electronics Co. Ltd., Samsung Electronics America Inc., Samsung Semiconductor Inc., Samsung Telecommunications America LLC, Samsung Austin Semiconductor LLC - Magistrate Consent Notice to Pltf. ( Filing fee $ 350, receipt number 03110000000000518980.) - filed by Spansion LLC. (Attachments: # 1 Exhibit A, # 2 Exhibit B, # 3 Exhibit C, # 4 Exhibit D, # 5 Exhibit E, # 6 Exhibit F, # 7 Civil Cover Sheet)(dzs, )
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